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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CH857SPT CURRENT 0.1 Ampere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated PNP transistors in one package. (1) (6) SC-88/SOT-363 1.2~1.4 0.65 0.65 2.0~2.2 CONSTRUCTION * Two PNP transistors in one package. (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. C1 B2 5 E2 4 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 TR2 TR1 1 E1 2 B1 3 C2 Dimensions in millimeters SC-88/SOT-363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-01 PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open emitter open collector - - - - - - - Tamb 25 C; note 1 - MIN. MAX. -50 -45 -50 -5 -100 -200 -2 300 +150 150 +150 V V V V UNIT mA mA mA mW C C C -55 - -55 RATING CHARACTERISTIC ( CH857SPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 415 UNIT K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE VCEsat VBEsat Cc fT NF Note 1. Pulse test: tp 300 s; 0.02. PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency noise figure CONDITIONS IE = 0; VCB = 30 V IC = 0; VCB = 30 V; TA = 150 OC IC = 0; VEB = - 4 V IC = -2.0 mA; VCE = -5.0V; note 1 IC = -10 mA ; IB = -0.5 mA IC = -100 mA ; I B = -5 mA IC = -2.0 mA;VCE =- 5.0 V IC = -10 mA;VCE = -5.0 V IE = ie = 0; VCB = -10V; f = 1 MHz - - - 125 - - -600 - - MIN. - - - - - - - - 3.5 200 2.5 TYP. MAX. -15 -4.0 -15 630 -300 -650 -750 -820 - - - mV mV mV mV pF MHz dB UNIT nA uA nA IC = -10mA; VCE = - 5 V ; - f = 100 MHz IC = -0.2 mA; VCE = - 5V;Rs = 2.0K - f = 1.0 KHz; BW = 200KHz RATING CHARACTERISTIC CURVES ( CH857SPT ) Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0. 3 0.25 0. 2 0.15 400 125 C = 10 300 25 C 200 25 C 0. 1 0.05 0 0.1 1 10 10 0 300 100 - 40 C 125 C - 40 C 0 0.01 0 .1 1 10 100 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRE NT (mA) RATING CHARACTERISTIC CURVES ( CH857SPT ) V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1.2 1 0.8 0.6 0.4 0.2 0 0.1 Base Emitter ON Voltage vs Collector Current 1 = 10 0.8 - 40 C 25 C 125 C - 40 C 25 C 0.6 125 C 0.4 0.2 V CE = 5V 1 10 10 0 300 0 0.1 1 10 100 200 I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRE NT (mA) Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) V CB = 50V 10 BVCER - BREAKDOWN VOLTAGE (V) 10 0 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 95 90 1 85 80 0. 1 75 0.01 25 50 75 10 0 125 70 0.1 1 10 100 1000 T A - AMBIE NT TEMP ERATURE ( C) RESISTANCE (k ) V CE - COLLECTOR-EMITTER VOLTAGE (V) Collector Saturation Region 4 Input and Output Capacitance vs Reverse Voltage 100 Ta = 25 C 3 f = 1.0 MHz 2 Ic = 100 uA 50 mA 300 mA CAPACITANCE (pF) 10 Cib Cob 1 0 100 300 700 2000 4000 0.1 1 10 100 I B - BASE CURRENT (uA) V CE - COLLECTOR VOLTAGE (V) RATING CHARACTERISTIC CURVES ( CH857SPT ) f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 300 Switching Times vs Collector Current 270 240 210 40 Vce = 5V ts 30 TIME (nS) 180 150 120 90 60 30 20 IB1 = IB2 = Ic / 10 V cc = 10 V 10 tf tr td 10 20 30 50 100 200 300 0 1 10 20 50 100 150 0 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperat ure PD - POWE R DIS SIPATION (W) 500 400 300 200 100 0 0 25 50 75 100 125 150 TE MPE RATURE ( C) |
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